Study of Laser Backside Ohmic Contact Formation of SiC-Ni Interface to Evaluate the Process Influence on the Electrical Characteristics-Reference-Cited by-同舟云学术

Study of Laser Backside Ohmic Contact Formation of SiC-Ni Interface to Evaluate the Process Influence on the Electrical Characteristics

Published:2022-05-31 Issue: Volume:1062 Page:180-184
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Lewke Dirk¹,Supplieth Frank²,von Ringleben Maik¹,Ransom John²

Affiliation:

1. 3D-Micromac AG

2. X-FAB

Abstract

Within this paper, we will present the results of a study on the ohmic contact formation process with nanosecond (ns) pulsed UV lasers. For the study we compared two laser processes: The base line process with a 100-300 ns pulsed laser with Gaussian beam profile and the 3D-Micromac AG process with a 50-100 ns pulsed laser with top hat beam profile. The forward voltage characteristics at wafer level was analyzed and proves a clear benefit of the top hat laser process. Besides, the forward voltage characteristics of a second run was performed to analyze the influence of increasing energy density to the electrical characteristic of heat sensitive front side structures. Also with high energy density no negative influence could be detected.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.1062.180.pdf

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