Toward the Reproducible Growth of Graphene on Wide SiC Steps: A Study of the Geometric Properties of 4H-SiC (0001) Substrates

Abstract

Herein, we report an original adaptation of an XRD set-up in order to measure the miscut angle values in our 4H-SiC on axis substrates with a high precision of ± 0.02°. This study also reveals a correlation between the formation of wide steps on 4H-SiC(0001) and the relative orientation of the SiC crystalline planes versus the gas flow direction. These two results paves the way towards the reproducible growth of graphene over wide SiC steps.