Buffer layers inhomogeneity and coupling with epitaxial graphene unravelled by Raman scattering and graphene peeling-Reference-Cited by-同舟云学术

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Buffer layers inhomogeneity and coupling with epitaxial graphene unravelled by Raman scattering and graphene peeling

Published:2020-08 Issue: Volume:163 Page:224-233
ISSN:0008-6223
Container-title:Carbon
language:en
Short-container-title:Carbon

Author:

Wang Tianlin,Huntzinger Jean-Roch,Bayle Maxime,Roblin Christophe,Decams Jean-Manuel,Zahab Ahmed-Azmi,Contreras Sylvie,Paillet Matthieu,Landois Périne

Publisher

Elsevier BV

Subject

General Chemistry,General Materials Science

Reference55 articles.

1. Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide;Lafont;Nat. Commun.,2015

2. Quantum Hall resistance standard in graphene devices under relaxed experimental conditions;Ribeiro-Palau;Nat. Nanotechnol.,2015

3. Giant quantum Hall plateaus generated by charge transfer in epitaxial graphene;Alexander-Webber;Sci. Rep.,2016

4. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide;Emtsev;Nat. Mater.,2009

5. Homogeneous large-area graphene layer growth on 6 H -SiC(0001);Virojanadara;Phys. Rev. B,2008

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