Abstract
The new laser ablation technique has been developed for analysis of metallic impurities in SiC and GaN wafers. Particles generated by a femto-second laser ablation were aspirated by an ejector and introduced to an Inductively Coupled Plasma Mass Spectrometry (ICP-MS) via a Gas Exchange Device (GED) and analyzed. A Metal Standard Aerosol Generation (MSAG) was used for quantitation of metallic impurities in SiC and GaN wafers.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
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