The Optical Properties of the Carbon Di-Vacancy-Antisite Complex in the Light of the TS Photoluminescence Center

Abstract

The TS center is a promising temperature-stable photoluminescence center in 4H SiC. Here we investigate the carbon di-vacancy-antisite complex inthe framework of ab initio theory as a tentative model for the TS center. We identify optical transitionsof the basal complexes with the TS lines based on excitation energies, Stark shifts, and radiative char acteristics. Charge-state-control of the TS center in p- and n-type Schottky contacts is demonstrated. Our experimental findings are consistent with the positively charged complex.