Comparison of Si CMOS and SiC CMOS Operational Amplifiers

Abstract

In this study, we numerically compare the characteristics of Si and SiC CMOS operational amplifiers (OpAmp) using LTspice. According to prior researches, we set the device parameters for Si and SiC MOSFETs. The OpAmp consists of three stages: the input stage, the gain stage, and the output stage. We established three criteria for the OpAmp's operation: (1) a unity gain frequency of 1MHz, (2) an open-loop gain of at least 75dB, and (3) a phase margin of more than 60° when a load capacitance is 300pF. To achieve a unity gain frequency of 1MHz, we adjusted the values of the resistor and capacitor used for phase compensation. The supply voltage was set to be ±5V for the Si OpAmp and ±15V for the SiC one. Our numerical analysis of the frequency response shows that the Si OpAmp met all three criteria. In contrast, the SiC OpAmp, when faced with a load capacitor of 300pF, had a phase margin of 43.4°, falling below the 60° mark. For the SiC OpAmp, the frequency response declined rapidly when the supply voltage dropped to 10V or below.