Novel Vitrified-Bond Ultra-Fine Grinding Technology for SiC Polishing

Abstract

The present paper shows a new fixed abrasive bond-grit formulation aimed for best-in-class, low-cost and high-quality finished SiC wafer surfaces. Grinding wheels manufactured with this technology can accomplish ultra-smooth SiC (Ra = 0.55 nm and TTV < 1 μm) surfaces due to their unique bonding structure and their tailored grit size. Additionally, SiC wafers ground with these wheels exhibit reduced sub-surface crystal damage, mirror-like polished surface and improved wafer geometry while both the grinding forces and the wheel wear are kept low.