Author:
Douhan R.M.H.,Kokhanenko A.P.,Lozovoy K.A.
Abstract
This paper deals with the results of serial of analytical calculations which have been done on an avalanche photodiode made of germanium with silicon quantum dots (QD) which has multilayers of QDs to determine its characteristics. In these calculations we focus on the main parameters that determine the performance of avalanche photodiode such as tunneling current, photosensitivity, multiplication factor, noise spectral density and avalanche noise factor. The study also compares the results of germanium silicon avalanche photodiode with other avalanche photodiodes made with different materials. The model which has been used for calculation is considered with a separated absorption and multiplication regions operation under several conditions varied between classical and Geiger mode.