A 2.1-ppm/°C all-MOSFET voltage reference with a 1.2-V supply voltage-Reference-Cited by-同舟云学术

A 2.1-ppm/°C all-MOSFET voltage reference with a 1.2-V supply voltage

Published:2018 Issue:23 Volume:15 Page:20180922-20180922
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Xu Huachao¹,Zhang Yuanzhi²,Liang Ke¹,Hu Jinlong³,Lu Chao²,Li Guofeng¹

Affiliation:

1. Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Nankai University

2. Department of Electrical and Computer Engineering, Southern Illinois University

3. School of Electrical and Electronic Engineering, Tianjin University of Technology

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/elex/15/23/15_15.20180922/_pdf

Reference10 articles.

1. [1] K. Ueno, et al.: “A 300 nW, 15 ppm/°C, 20 ppm/V CMOS voltage reference circuit consisting of subthreshold MOSFETs,” IEEE J. Solid-State Circuits 44 (2009) 2047 (DOI: 10.1109/JSSC.2009.2021922).

2. [2] H. Xu, et al.: “A 0.45 ppm and low phase noise analog crystal oscillator using a four order temperature compensation algorithm,” AEU Int. J. Electron. Commun. 90 (2018) 69 (DOI: 10.1016/j.aeue.2018.04.005).

3. [3] H. Xu, et al.: “A novel 0.84 ppm/°C CMOS curvature-compensated bandgap with 1.2 V supply voltage,” AEU Int. J. Electron. Commun. 91 (2018) 66 (DOI: 10.1016/j.aeue.2018.05.001).

4. [4] Y. Zeng, et al.: “A 12.8 nA and 7.2 ppm/°C CMOS voltage reference without amplifier,” IEICE Electron. Express 15 (2018) 20171220 (DOI: 10.1587/elex.15.20171220).

5. [5] L. Magnelli, et al.: “A 2.6 nW, 0.45 V temperature-compensated subthreshold CMOS voltage reference,” IEEE J. Solid-State Circuits 46 (2011) 465 (DOI: 10.1109/JSSC.2010.2092997).

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