A Ka band CMOS differential LNA with 25 dB gain using neutralized bootstrapped cascode amplifier
Author:
Affiliation:
1. Wireless Sensor Network Department, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
2. University of Chinese Academy of Sciences
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://www.jstage.jst.go.jp/article/elex/15/9/15_15.20180230/_pdf
Reference13 articles.
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2. [2] B. Razavi: RF Microelectronics (Publishing House of Electronics Industry, Beijing, 2012) 2nd ed. 53.
3. [3] D. Zhao and P. Reynaert: “A 40-nm CMOS E-band 4-way power amplifier with neutralized bootstrapped cascode amplifier and optimum passive circuits,” IEEE Trans. Microw. Theory Techn. 63 (2015) 4083 (DOI: 10.1109/TMTT.2015.2496341).
4. [4] W. L. Chan and J. R. Long: “A 58–65 GHz neutralized CMOS power amplifier with PAE above 10% at 1-V supply,” IEEE J. Solid-State Circuits 45 (2010) 554 (DOI: 10.1109/JSSC.2009.2039274).
5. [5] H. Wu, et al.: “A blocker-tolerant current mode 60-GHz receiver with 7.5-GHz bandwidth and 3.8-dB minimum NF in 65-nm CMOS,” IEEE Trans. Microw. Theory Techn. 63 (2015) 1053 (DOI: 10.1109/TMTT.2015.2393310).
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