A K-Band Low Noise Amplifier in 65-nm CMOS with 3.3-dB NF and 18.1-dB Power Gain-Reference-Cited by-同舟云学术

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A K-Band Low Noise Amplifier in 65-nm CMOS with 3.3-dB NF and 18.1-dB Power Gain

Published:2022-11-27 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)
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Author:

Chen Xin¹,Ren Xiangzheng¹,Cheng Depeng¹,Feng Jing¹,Wu Xu¹,Hu Qingsheng¹,Fan Xiangning¹,Li Lianming¹

Affiliation:

1. Southeast University,School of Information Science and Engineering,Nanjing,China

Funder

Research and Development

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10106786/10106791/10107033.pdf?arnumber=10107033

Reference8 articles.

1. A 12.5 mW Packaged K-Band CMOS SOI LNA with 1.5 dB NF

2. A 24-43 GHz LNA with 3.1-3.7 dB Noise Figure and Embedded 3-Pole Elliptic High-Pass Response for 5G Applications in 22 nm FDSOI

3. A 55–64-GHz Low-Power Small-Area LNA in 65-nm CMOS With 3.8-dB Average NF and ~12.8-dB Power Gain

4. A K/Ka/V Triband Single-Signal-Path Receiver With Variable-Gain Low-Noise Amplifier and Constant-Gain Phase Shifter in 28-nm CMOS

5. A 7.2–27.3 GHz CMOS LNA With 3.51 ±0.21 dB Noise Figure Using Multistage Noise Matching Technique

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