Design of broadband high-gain GaN MMIC power amplifier based on reactive/resistive matching and feedback technique
Author:
Affiliation:
1. School of Information Engineering, Guangdong University of Technology
2. Sichuan YiFeng Electronic Science & Technology Co., Ltd.
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://www.jstage.jst.go.jp/article/elex/18/19/18_18.20210313/_pdf
Reference30 articles.
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2. [2] K. Kim, et al.: “Design of a broadband power amplifier using an optimized feedback network,” Microw. Opt. Technol. Lett. 53 (2011) 2846 (DOI: 10.1002/mop.26372).
3. [3] X. Ding, et al.: “2-4 GHz wideband power amplifier with ultra-flat gain and high PAE,” Electron. Lett. 49 (2013) 326 (DOI: 10.1049/el.2012.4135).
4. [4] M. Shafi, et al.: “5G: A tutorial overview of standards, trials, challenges, deployment, and practice,” IEEE J. Sel. Areas Commun. 35 (2017) 1201 (DOI: 10.1109/JSAC.2017.2692307).
5. [5] A. Alizadeh, et al.: “On design of wideband compact-size Ka/Q-band high-power amplifiers,” IEEE Trans. Microw. Theory Techn. 64 (2016) 1831 (DOI: 10.1109/TMTT.2016.2554578).
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