A K-band broadband low noise amplifier with 18.8dB gain and -13dBm IP<sub>1dB</sub> in 0.13-µm CMOS-Reference-Cited by-同舟云学术

A K-band broadband low noise amplifier with 18.8dB gain and -13dBm IP<sub>1dB</sub> in 0.13-µm CMOS

Author:

Li Jinwei¹,Sun Bing¹,Li Dongze²,Xia Qingzhen³,Huang Jiawei⁴,Wu Lei¹,Chang Hudong¹,Jia Rui⁵,Liu Honggang³

Affiliation:

1. Key Laboratory of Microelectronic Device and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences

2. Institute of Microelectronics of Tsinghua University

3. Department of Electronics, Peking University

4. School of Integrated Circuits, University of Chinese Academy of Sciences

5. High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics of Chinese Academy of Sciences

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

Reference33 articles.

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