A transformer matching X-band MMIC power amplifier with temperature compensation technique on 0.25µm GaN process
Author:
Affiliation:
1. University of Chinese Academy of Sciences
2. Institute of Microelectronics, Chinese Academy of Sciences
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://www.jstage.jst.go.jp/article/elex/19/24/19_19.20220425/_pdf
Reference31 articles.
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2. [2] J.R. Long: “Monolithic transformers for silicon RFIC design,” IEEE J. Solid-State Circuits 35 (2000) 1368 (DOI: 10.1109/4.868049).
3. [3] H. Jia, et al.: “A full Ka-band power amplifier with 32.9% PAE and 15.3-dBm power in 65-nm CMOS,” IEEE Trans. Circuits Syst. I, Reg. Papers 65 (2018) 2657 (DOI: 10.1109/TCSI.2018.2799983).
4. [4] B. Yang, et al.: “A watt-level quadrature switched/floated-capacitor power amplifier with back-off efficiency enhancement in complex domain using reconfigurable self-coupling canceling transformer,” IEEE ISSCC (2021) 362 (DOI: 10.1109/ISSCC42613.2021.9366029).
5. [5] T. Chiu, et al.: “A Ka-band transformer-based switchless bidirectional PA-LNA in 90-nm CMOS process,” IEEE MTT-S (IMS) (2021) 450 (DOI: 10.1109/IMS19712.2021.9574916).
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