Characterization of the gate-voltage dependency of input capacitance in a SiC MOSFET
Author:
Affiliation:
1. Kyoto University, Dept. of Electrical Eng., Graduate School of Engineering
2. Osaka University, Div. Electrical, Electronic, and Information Eng., Graduate School of Engineering
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://www.jstage.jst.go.jp/article/elex/7/7/7_7_480/_pdf
Reference9 articles.
1. [1] D. A. Grant, Power MOSFETs: theory and applications, John Wiley & Sons, New York, 1989.
2. [2] B. J. Baliga, Fundamentals of power semiconductor devices, Springer, New York, 2008.
3. [3] S. E. Saddow and A. Agarwal, Advances in silicon carbide processing and applications, Artech House, Boston, 2004.
4. [4] S. M. Sze and K. K. Ng, Physics of semiconductor devices: 3rd edition, John Wiley & Sons, New Jersey, 2007.
5. [5] Y. Tsividis, Operation and modeling of the MOS transistor: 2nd edition, McGraw-Hill, New York, 1999.
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