Effective mobility and interface-state density of La2O3 nMISFETs after post deposition annealing-Reference-Cited by-同舟云学术

Effective mobility and interface-state density of La2O3 nMISFETs after post deposition annealing

Published:2006 Issue:13 Volume:3 Page:316-321
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Ng Jin-Aun¹,Sugii Nobuyuki²,Kakushima Kuniyuki²,Ahmet Parhat¹,Tsutsui Kazuo²,Hattori Takeo¹,Iwai Hiroshi¹

Affiliation:

1. Frontier Collaborative Research Center

2. Interdisciplinary Graduate School of Science and Engineering Tokyo Institute of Technology

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://www.jstage.jst.go.jp/article/elex/3/13/3_13_316/_pdf

Reference13 articles.

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4. Electrical properties of vacuum annealed La2O3 thin films grown by E-beam evaporation

5. [5] Y. Kim, S.-I. Ohmi, K. Tsutsui, and H. Iwai, “Space-charge-limited currents in La₂O₃ thin films deposited by E-beam evaporation after low temperature dry-nitrogen annealing, ”Jpn. J. Appl. Phys., vol. 44, no. 6, pp. 4032-4042, June 2005.

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