Affiliation:
1. College of Electronic Science and Engineering, National University of Defense Technology
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference22 articles.
1. [1] A. Chen: “Nonlinearity and asymmetry for device selection in cross-bar memory arrays,” IEEE Trans. Electron Devices 62 (2015) 2857 (DOI: 10.1109/TED.2015.2450712).
2. [2] S. Lee, et al.: “Comprehensive methodology for ReRAM and selector design guideline of cross-point array,” IEEE International Memory Workshop (IMW) (2015) 1 (DOI: 10.1109/IMW.2015.7150280).
3. [3] L. Zhanget al.: “One-Selector one-resistor cross-point array with threshold switching selector,” IEEE Trans. Electron Devices 62 (2015) 3250 (DOI: 10.1109/TED.2015.2461656).
4. [4] L. Zhanget al.: “Ultrathin metal/amorphous-silicon/metal diode for bipolar RRAM selector applications,” IEEE Electron Device Lett. 35 (2014) 199 (DOI: 10.1109/LED.2013.2293591).
5. [5] L. Zhang, et al.: “High-drive current (>1 MA/cm2) and highly nonlinear (>103) TiN/amorphous-Silicon/TiN scalable bidirectional selector with excellent reliability and its variability impact on the 1S1R array performance,” IEEE International Electron Devices Meeting (IEDM) (2014) 6.8.1 (DOI: 10.1109/IEDM.2014.7047000).
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