A D-band SPST switch using parallel-stripline swap with defected ground structure-Reference-Cited by-同舟云学术

A D-band SPST switch using parallel-stripline swap with defected ground structure

Published:2017 Issue:24 Volume:14 Page:20171104-20171104
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Luo Jiang¹,He Jin¹,Apriyana Alit²,Feng Guangyin²,Huang Qijun¹

Affiliation:

1. School of Physics and Technology, Wuhan University

2. School of Electrical and Electronic Engineering, Nanyang Technological University

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/elex/14/24/14_14.20171104/_pdf

Reference12 articles.

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2. [2] M. Uzunkol and G. M. Rebeiz: “140–220 GHz SPST and SPDT switches in 45 nm CMOS SOI,” IEEE Microw. Wireless Compon. Lett. 22 (2012) 412 (DOI: 10.1109/LMWC.2012.2206017).

3. [3] Z. M. Tsaiet al.: “FET-integrated CPW and the application in filter synthesis design method on traveling-wave switch above 100 GHz,” IEEE Trans. Microw. Theory Techn. 54 (2006) 2090 (DOI: 10.1109/TMTT.2006.873629).

4. [4] B. Zhanget al.: “A switch-based ASK modulator for 10 Gbps 135 GHz communication by 0.13-μm MOSFET,” IEEE Microw. Wireless Compon. Lett. 22 (2012) 415 (DOI: 10.1109/LMWC.2012.2205227).

5. [5] U. Yodprasit, et al.: “D-band 3.6-dB-insertion-loss ASK modulator with 19.5-dB isolation in 65-nm CMOS technology,” Asia-Pacific Microwave Conference (APMC) (2010) 1853.

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