A D-band CMOS power amplifier for short-range data center communication-Reference-Cited by-同舟云学术

A D-band CMOS power amplifier for short-range data center communication

Published:2020-06-25 Issue:12 Volume:17 Page:20200159-20200159
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Pan Junren¹,Luo Jiang¹²,He Jin¹,Feng Guangyin³,Apriyana Alit³,Zhang Yue Ping³

Affiliation:

1. School of Physics and Technology, Wuhan University

2. Nanjing Electronic Devices Institute

3. School of Electrical and Electronic Engineering, Nanyang Technological University

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/elex/17/12/17_17.20200159/_pdf

Reference30 articles.

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2. [2] K. Katayama, et al.: “133 GHz CMOS power amplifier with 16dB gain and +8dBm saturated output power for multi-gigabit communication,” IEEE European Microwave Integrated Circuit Conference (2013) 69.

3. [3] H.S. Son, et al.: “A D-band CMOS power amplifier for wireless chip-to-chip communications with 22.3 dB gain and 12.2 dBm P_1dB in 65-nm CMOS technology,” IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR) (2018) 35 (DOI: 10.1109/PAWR.2018.8310061)

4. [4] D. Simic and P. Reynaert: “A 14.8 dBm 20.3 dB power amplifier for D-band applications in 40 nm CMOS,” IEEE Radio Frequency Integrated Circuits Symposium (2012) 232 (DOI: 10.1109/RFIC.2018.8428981).

5. [5] H.S. Son, et al.: “A 109 GHz CMOS power amplifier with 15.2 dBm Psat and 20.3 dB gain in 65-nm CMOS technology,” IEEE Microw. Wireless Compon. Lett. 26 (2016) 510 (DOI: 10.1109/LMWC.2016.2574834).

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