Ultra-wideband GaN HEMT power amplifier with practical mixed lumped approach employing real-frequency technique-Reference-Cited by-同舟云学术

Ultra-wideband GaN HEMT power amplifier with practical mixed lumped approach employing real-frequency technique

Published:2017 Issue:13 Volume:14 Page:20170455-20170455
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Lim Wen Jun¹,Kumar Narendra¹,Yarman Siddik²,Chacko Prakash³

Affiliation:

1. Department of Electrical Engineering, University of Malaya

2. Department of Electrical Electronics Engineering, Istanbul University

3. Research & Development of Motorola Solutions

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/elex/14/13/14_14.20170455/_pdf

Reference13 articles.

1. [1] T. Ulversoy: “Software defined radio: Challenges and opportunities,” Commun. Surveys Tuts. 12 (2010) 531 (DOI: 10.1109/SURV.2010.032910.00019).

2. [2] P. Chenet al.: “Multiobjective bayesian optimization for active load modulation in a broadband 20-W GaN Doherty power amplifier design,” IEEE Trans. Microw. Theory Techn. 65 (2017) 860 (DOI: 10.1109/TMTT.2016.2636146).

3. [3] F. A. Mughal, et al.: “Design and fabrication of a GaN HEMT based amplifier for wideband applications,” 12th IBCAST (2015) 14984122 (DOI: 10.1109/IBCAST.2015.7058554).

4. [4] S. A. Mohadeskasaei and X. Zhou: “A 30 watt high efficient high power RF pulse power amplifier,” NEMO 2016 (2016) 1 (DOI: 10.1109/NEMO.2016.7561638).

5. [5] K. Narendraet al.: “Vectorially combined distributed power amplifiers for software-defined radio applications,” IEEE Trans. Microw. Theory Techn. 60 (2012) 3189 (DOI: 10.1109/TMTT.2012.2207914).

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