A Highly Integrated C-Band Feedback Resistor Transceiver Front-End Based on Inductive Resonance and Bandwidth Expansion Techniques-Reference-Cited by-同舟云学术

A Highly Integrated C-Band Feedback Resistor Transceiver Front-End Based on Inductive Resonance and Bandwidth Expansion Techniques

Published:2024-01-23 Issue:2 Volume:15 Page:169
ISSN:2072-666X
Container-title:Micromachines
language:en
Short-container-title:Micromachines

Author:

Shan Boyang¹,Fu Haipeng²^ORCID,Wang Jian¹²³^ORCID

Affiliation:

1. School of Microelectronics, Tianjin University, Tianjin 300072, China

2. Qingdao Institute for Ocean Technology, Tianjin University, Qingdao 266200, China

3. Shandong Engineering Technology Research Center of Ocean Information Awareness and Transmission, Qingdao 266200, China

Abstract

This paper presents a highly integrated C-band RF transceiver front-end design consisting of two Single Pole Double Throw (SPDT) transmit/receive (T/R) switches, a Low Noise Amplifier (LNA), and a Power Amplifier (PA) for Ultra-Wideband (UWB) positioning system applications. When fabricated using a 0.25 μm GaAs pseudomorphic high electron mobility transistor (pHEMT) process, the switch is optimized for system isolation and stability using inductive resonance techniques. The transceiver front-end achieves overall bandwidth expansion as well as the flat noise in receive mode using the bandwidth expansion technique. The results show that the front-end modules (FEM) have a typical gain of 22 dB in transmit mode, 18 dB in receive mode, and 2 dB noise in the 4.5–8 GHz band, with a chip area of 1.56 × 1.46 mm2. Based on the available literature, it is known that the proposed circuit is the most highly integrated C-band RF transceiver front-end design for UWB applications in the same process.

Funder

State Key Laboratory of Complex Electromagnetic Environment Effects on Electronics and Information Systems

Publisher

MDPI AG

Link

https://www.mdpi.com/2072-666X/15/2/169/pdf

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