Low noise homodyne detection of terahertz waves by zero-biased InP/InGaAs Fermi-level managed barrier diode
Author:
Affiliation:
1. Center for Natural Sciences, Kitasato University
2. Graduate School of Medical Sciences, Kitasato University
3. NTT Electronics Techno Co.
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://www.jstage.jst.go.jp/article/elex/14/18/14_14.20170722/_pdf
Reference11 articles.
1. [1] T. W. Croweet al.: “GaAs Schottky diodes for THz mixing applications,” Proc. IEEE 80 (1992) 1827 (DOI: 10.1109/5.175258).
2. [2] P. H. Siegel and R. J. Dengler: “Terahertz heterodyne imaging part I: Introduction and techniques,” Int. J. Infrared Millim. Waves 27 (2006) 465 (DOI: 10.1007/s10762-006-9103-x).
3. [3] F. Sizov and A. Rogalski: “THz detectors,” Prog. Quantum Electron. 34 (2010) 278 (DOI: 10.1016/j.pquantelec.2010.06.002).
4. [4] S. Preuet al.: “Terahertz detection by a homodyne field effect transistor multiplicative mixer,” IEEE Trans. THz Sci. Technol. 2 (2012) 278 (DOI: 10.1109/TTHZ.2012.2191671).
5. [5] S. S. Gearhartet al.: “A wide-band 760-GHz planar integrated Schottky receiver,” IEEE Microw. Guided Wave Lett. 3 (1993) 205 (DOI: 10.1109/75.222776).
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