The structure improvement of SiC IGBT for anti-latch-up capability
Author:
Affiliation:
1. Xi’an University of Technology and Department of Applied Physics
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Link
https://www.jstage.jst.go.jp/article/elex/advpub/0/advpub_21.20240432/_pdf
Reference32 articles.
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2. [2] L. Han et al.: "A Review of SiC IGBT," IEEE Transactions on Power Electronics(2021) (DOI:10.1109/tpel.2020.3005940)
3. [3] K. L. Haugen et al.: "High precision scalable power converter for accelerator magnets," Journal of Instrumentation(2022) (DOI:10.1088/1748-0221/17/03/c03021)
4. [4] K. Jacobs et al.: "Comparative Evaluation of Voltage Source Converters With Silicon Carbide Semiconductor Devices for High-Voltage Direct Current Transmission," IEEE Transactions on Power Electronics(2021) (DOI:10.1109/tpel.2021.3049320)
5. [5] F. Roccaforte et al.: "Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices," Microelectronic Engineering(2018) (DOI:10.1016/j.mee.2017.11.021)
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