High precision scalable power converter for accelerator magnets

Abstract

Abstract The lower conduction power losses and the positive temperature coefficient that favours parallel connections, make Silicon Carbide (SiC) Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) to be an excellent replacement of existing Silicon Insulated Gate Bipolar Transistors (IGBTs) technology. These characteristics combined with high switching frequency operation, enables the design of high-accuracy DC-DC converters with minimised filtering requirements. This paper investigates the design for a converter with high-accuracy current (0.9 ppm) supplying a 0.05 H electromagnetic load, aiming to achieve the accuracy without the use of active filters, by using SiC MOSFETs and a scalable module-based converter design.