Optimization of periphery circuits in a 1K-bit PCRAM chip for highly reliable write and read operations-Reference-Cited by-同舟云学术

Optimization of periphery circuits in a 1K-bit PCRAM chip for highly reliable write and read operations

Published:2014 Issue:24 Volume:11 Page:20141071-20141071
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Fan Xi¹,Chen Houpeng¹,Wang Qian¹,Li Xi¹,Zhang Yiyun¹,Hu Jiajun¹,Jin Rong¹,Chen Yifeng¹,Song Zhitang¹

Affiliation:

1. State Key Laboratory of Functional Materials for Informatics, Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/elex/11/24/11_11.20141071/_pdf

Reference18 articles.

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4. [4] A. L. Lacaita and A. Redaelli: Microelectron. Eng. 109 (2013) 351. DOI:10.1016/j.mee.2013.02.105

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