A 40-nm Resilient Cache Memory for Dynamic Variation Tolerance Delivering ×91 Failure Rate Improvement under 35% Supply Voltage Fluctuation-Reference-Cited by-同舟云学术

A 40-nm Resilient Cache Memory for Dynamic Variation Tolerance Delivering ×91 Failure Rate Improvement under 35% Supply Voltage Fluctuation

Published:2014 Issue:4 Volume:E97.C Page:332-341
ISSN:0916-8524
Container-title:IEICE Transactions on Electronics
language:en
Short-container-title:IEICE Trans. Electron.

Author:

NAKATA Yohei¹,KIMI Yuta¹,OKUMURA Shunsuke¹,JUNG Jinwook¹,SAWADA Takuya¹,TOSHIKAWA Taku¹,NAGATA Makoto¹²,NAKANO Hirofumi³,YABUUCHI Makoto³,FUJIWARA Hidehiro³,NII Koji³,KAWAI Hiroyuki³,KAWAGUCHI Hiroshi¹,YOSHIMOTO Masahiko¹²

Affiliation:

1. Kobe University

2. JST CREST

3. Renesas Electronics Corporation

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/transele/E97.C/4/E97.C_332/_pdf

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