Low-Temperature Deposition of Yttrium Oxide on Flexible PET Films Using Time-Separated Yttrium Precursor and Oxidizer Injections
Author:
Affiliation:
1. Yamagata University
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
https://www.jstage.jst.go.jp/article/transele/E105.C/10/E105.C_2021FUP0002/_pdf
Reference25 articles.
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2. [2] M. Ito, C. Miyazaki, M. Ishizaki, M. Kon, N. Ikeda, T. Okubo, R. Matsubara, K. Hatta, Y. Ugajin, and N. Sekine, “Application of amorphous oxide TFT to electrophoretic display,” Journal of Non-Crystalline Solids, vol.354, no.19-25, pp.2777-2782, 2008. 10.1016/j.jnoncrysol.2007.10.083
3. [3] P.-T. Liu, Y.-T. Chou, and L.-F. Teng, “Environment-dependent metastability of passivation-free indium zinc oxide thin film transistor after gate bias stress,” Appl. Phys. Lett., vol.95, no.23, 233504, 2009. 10.1063/1.3272016
4. [4] J.-S. Park, J.K. Jeong, H.-J. Chung, Y.-G. Mo, and H.D. Kim, “Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water,” Appl. Phys. Lett., vol.92, no.7, 072104, 2008. 10.1063/1.2838380
5. [5] S. An, M. Mativenga, Y. Kim, and J. Jang, “Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y2O3 passivation,” Appl. Phys. Lett., vol.105, no.5, 053507, 2014. 10.1063/1.4892541
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