Affiliation:
1. University of the Ryukyus
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. [1] S. Ono, Y. Yamaguchi, Y. Kawaguchi, and A. Nakagawa, “30V sub-micron shallow junction planar-MOSFET for DC-DC converters,” Proc. ISPSD, Kitakyushu, Japan, pp.401-404, 2004.
2. [2] B.J. Baliga, Fundamentals of Power Semiconductor Devices, Springer, 2008.
3. [3] N. Yasuhara, K. Matsushita, K. Nakayama, B. Tanaka, S. Hodama, A. Nakagawa, and K. Nakamura, “Low gate charge 30V N-channel LDMOS for DC-DC converters,” Proc. ISPSD, Cambridge, U.K., pp.186-189, 2003.
4. [4] Q. Wang, M. Li, J. Sharp, and A. Challa, “The effects of double-epilayer structure on threshold voltage of ultralow voltage trench power MOSFET devices,” IEEE Trans. Electron Devices, vol.54, no.4, pp.833-839, April 2007.
5. [5] M.D. Pocha, A.G. Gonzalez, and R.W. Dutton, “Threshold voltage controllability in double-diffused-MOS transistors,” IEEE Trans. Electron Devices, vol.ED-21, no.12, pp.778-784, Dec. 1974.
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