Application of the Compact Channel Thermal Noise Model of Short Channel MOSFETs to CMOS RFIC Design-Reference-Cited by-同舟云学术

Application of the Compact Channel Thermal Noise Model of Short Channel MOSFETs to CMOS RFIC Design

Published:2009 Issue:5 Volume:E92-C Page:627-634
ISSN:0916-8524
Container-title:IEICE Transactions on Electronics
language:en
Short-container-title:IEICE Trans. Electron.

Author:

JEON Jongwook¹,SONG Ickhyun¹,LEE Jong Duk¹,PARK Byung-Gook¹,SHIN Hyungcheol¹

Affiliation:

1. Inter-University Semiconductor Research Center (ISRC) and School of EE, Seoul National University

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://www.jstage.jst.go.jp/article/transele/E92.C/5/E92.C_5_627/_pdf

Reference23 articles.

1. [1] E. Morifuji, H.S. Momose, T. Ohguro, T. Yoshitomi, and H. Kimijima, “Future perspective and scaling down roadmap for RF CMOS, ” Symp. VLSI Technology, pp.163-164, June 1999.

2. RF potential of a 0.18-μm CMOS logic device technology

3. [3] A.A. Abidi, “RF CMOS come of age, ” IEEE Microwave Magazine, vol.13, no.4, pp.47-60, Dec. 2003.

4. High-Frequency Noise of Modern MOSFETs: Compact Modeling and Measurement Issues

5. [5] H. Shin, S. Kim, and J. Jeon, “Analytical thermal noise model of deep-submicron MOSFETs, ” J. Semiconductor Technology and Science, vol.6, no.3, pp.206-209, Sept. 2006.

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