High-Frequency Noise of Modern MOSFETs: Compact Modeling and Measurement Issues-Reference-Cited by-同舟云学术

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High-Frequency Noise of Modern MOSFETs: Compact Modeling and Measurement Issues

Published:2006-09 Issue:9 Volume:53 Page:2062-2081
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Deen M.J.,Chen C.-H.,Asgaran S.,Rezvani G.A.,Tao J.,Kiyota Y.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/35290/01677840.pdf?arnumber=1677840

Cited by 78 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Induced Back-Gate Noise in FDSOI MOSFET;IEEE Transactions on Circuits and Systems II: Express Briefs;2023

2. Impact of self-heating on thermal noise in In1−xGaxAs GAA MOSFETs;Microelectronics Journal;2023-01

3. Low-frequency noise in downscaled silicon transistors: Trends, theory and practice;Physics Reports;2022-12

4. On‐Wafer Noise Measurements;Precision Measurement of Microwave Thermal Noise;2022-11-22

5. Unified Model of Shot Noise in the Tunneling Current in Sub-10 nm MOSFETs;Nanomaterials;2021-10-18

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