1. [1] T. Noguchi, D.Y. Kim, J.Y. Kwon, K.B. Park, J.S. Jung, W.X. Xianyu, H.X. Yin, and H.S. Cho, “Low temperature poly-Si TFT technology,” Mat. Res. Soc. Proc., vol.814, 11.4, p.7, 2004.
2. [2] T. Serikawa, “Glow-discharge sputter-deposition of Si films and fabrications of high quality polycrystalline Si thin film transistors,” Proc. Int. TFT Conf., p.52, 2005.
3. Grain Enlargement of Polycrystalline Silicon by Multipulse Excimer Laser Annealing: Role of Hydrogen
4. [4] T. Kaitoh, T. Miyazawa, H. Miyake, T. Noda, T. Sakai, Y. Owaku, and T. Saitoh, “SELAX technology for poly-Si TFTs integrated with amorphous-Si TFTs,” Proc. IDW07, TFTs, AMD-7, p.481, 2007.
5. [5] K. Tatsuki, T. Arai, N. Umezu, K. Shirai, Y. Inagaki, and T. Urabe, “Microcrystalline silicon TFT crystallized by near-infrared diode laser for large-sized AMOLED-TV,” Dig. of Tech. Papers, AM-FPD 08, S-11, p.109, 2008.