Grain Enlargement of Polycrystalline Silicon by Multipulse Excimer Laser Annealing: Role of Hydrogen-Reference-Cited by-同舟云学术

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Grain Enlargement of Polycrystalline Silicon by Multipulse Excimer Laser Annealing: Role of Hydrogen

Published:2006-04-07 Issue:4A Volume:45 Page:2726-2730
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kawamoto Naoya,Masuda Atsushi,Matsuo Naoto,Seri Yasuhiro,Nishimori Toshimasa,Kitamon Yoshitaka,Matsumura Hideki,Hamada Hiroki,Miyoshi Tadaki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Review—Technology Trends of Poly-Si TFTs from the Viewpoints of Crystallization and Device Performance;ECS Journal of Solid State Science and Technology;2019

3. (Invited) Technology Trend of Poly-Si TFT from Viewpoints of Crystallization and Device Performance;ECS Transactions;2018-07-23

4. Photoconductivity of Si films after blue multi-laser diode annealing for photosensor applications;Japanese Journal of Applied Physics;2014-01-01

5. Large-Grain Epitaxial Thickening Polycrystalline Silicon Films on AIC-Seed Layer by HWCVD with Different Hydrogen Dilution;Electrochemical and Solid-State Letters;2012

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