Affiliation:
1. NTT Photonics Laboratories, NTT Corporation
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation
2. [2] T. Oka and T. Nozawa, “AlGaN/GaN recessed MIS-Gate HFET with high-threshold-voltage normally-off operation for power electronics applications,” IEEE Electron Device Lett., vol.29, no.7, pp.668-670, 2008.
3. [3] T. Mizutani, M. Ito, S. Kishimoto, and F. Nakamura, “AlGaN/GaN HEMTs with thin InGaN cap layer for normally off operation,” IEEE Electron Device Lett., vol.28, no.7, pp.549-551, 2007.
4. [4] M. Hiroki, N. Maeda, and T. Kobayashi, “Electrical properties and device characteristics of InAlN/AlGaN/AlN/GaN heterostructure field effect transistors,” Physica Status Solidi (c), DOI: 10.1002/pssc.200880970, 2009.
5. [5] P.M. Asbeck, C.-P. Lee, and M.-C.F. Chang, “Piezoelectric effects in GaAs FET's and their role in orientation-dependent device characteristics,” IEEE Trans. Electron Devices, vol.ED-31, no.10, pp.1377-1380, 1984.
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献