Affiliation:
1. Department of Physical Electronics, Tokyo Institute of Technology
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. [1] T. Suzuki, Y. Kawano, M. Sato, T. Hirose, and K. Joshin, “60 and 77GHz power amplifiers in standard 90nm CMOS,” IEEE International Solid-State Circuits Conference Digest of Technical Papers, pp.562-563, Feb. 2008.
2. [2] B. Razavi, “Design of millimeter-wave CMOS Radio: A tutorial,” IEEE Trans. Circuits Syst., vol.56, no.1, pp.4-16, Jan. 2009.
3. RF-SoC-expectations and required conditions
4. [4] K. Okada, K. Matsushita, N. Takayama, S. Ito, N. Li, and A. Matsuzawa, “Passive device characterization for 60GHz CMOS power amplifiers,” IEEE Global Symposium on Millimeter Wave, April 2009.
5. [5] K. Matsushita, N. Takayama, N. Li, S. Ito, K. Okada, and A. Matsuzawa, “CMOS device modeling for millimeter-wave power amplifiers,” IEEE Radio Frequency Integration Technology, Dec. 2009.
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