4H-SiC Avalanche Photodiodes for 280 nm UV Detection
Author:
Affiliation:
1. Hongik University
2. GE Global Research
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://www.jstage.jst.go.jp/article/transele/E93.C/5/E93.C_5_648/_pdf
Reference8 articles.
1. Reliability of ultrathin (<2 nm) oxides on strained SiGe heterolayers
2. GaN avalanche photodiodes
3. [3] J. Cornu, “Electric fields at and near the surface of p-n junctions with negative bevel angles, ” Electron. Lett., vol.8, pp.169-170, 1972.
4. [4] J. Cornu, “Field distribution near the surface of beveled p-n junctions in high-voltage devices, ” IEEE Trans. Electron Devices, vol.20, pp.347-352, 1973.
5. [5] http://www.ioffe.ru/SVA/NSM/Semicond/SiC/recombination.html
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Diode quenching for Geiger mode avalanche photodiode;IEICE Electronics Express;2018
2. Passive Quenching Electronics for Geiger Mode 4H-SiC Avalanche Photodiodes;Chinese Physics Letters;2015-12
3. Discrimination Voltage and Overdrive Bias Dependent Performance Evaluation of Passively Quenched SiC Single-Photon-Counting Avalanche Photodiodes;Chinese Physics Letters;2015-08
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