A Low-Noise, High-Gain Quasi-Millimeter-Wave Receiver MMIC with a Very High Degree of Integration Using 3D-MMIC Technology-Reference-Cited by-同舟云学术

A Low-Noise, High-Gain Quasi-Millimeter-Wave Receiver MMIC with a Very High Degree of Integration Using 3D-MMIC Technology

Published:2011 Issue:10 Volume:E94-C Page:1548-1556
ISSN:0916-8524
Container-title:IEICE Transactions on Electronics
language:en
Short-container-title:IEICE Trans. Electron.

Author:

KAHO Takana¹,YAMAGUCHI Yo¹,UEHARA Kazuhiro¹,ARAKI Kiyomichi²

Affiliation:

1. NTT

2. Tokyo Institute of Technology

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://www.jstage.jst.go.jp/article/transele/E94.C/10/E94.C_10_1548/_pdf

Reference12 articles.

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2. Highly integrated 60 GHz transmitter and receiver MMICs in a GaAs pHEMT technology

3. Broadband integrated millimeter-wave up- and down-converter GaAs MMICs

4. Three-dimensional MMIC technology for low-cost millimeter-wave MMICs

5. [5] K. Nishikawa, B. Piernas, T. Nakagawa, K. Araki, and K. Cho, “V-band fully-integrated TX/RX single-chip 3-D MMICs using commercial GaAs pHEMT technology for high-speed wireless applications,” Proc. 2003 IEEE GaAs IC Symp., pp.97-100, Nov. 2003.

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