Affiliation:
1. Tokyo Institute of Technology
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Reference32 articles.
1. [1] R. Kuroda, A. Teramoto, T. Suwa, R. Hasebe, X. Li, M. Konda, S. Sugawa, and T. Ohmi, “Atomically flattening technology at 850°C for Si(100) surface,” ECS Trans., vol.28, no.1, pp.299-309, 2010.
2. [2] T. Ohmi, K. Kotani, A. Teramoto, and M. Miyashita, “Dependence of electron channel mobility on Si-SiO2 interface microroughnes,” IEEE Electron Device Lett., vol.12, no.12, pp.652-654, 1991.
3. [3] T. Yamanaka, S.J. Fang, H.C. Lin, J.P. Snyder, and C.R. Helms, “Correlation between inversion layer mobility and surface roughness measured by AFM,” IEEE Electron Device Lett., vol.17, no.4, pp.178-180, 1996.
4. [4] T. Ohmi, A. Teramoto, R. Kuroda, and N. Miyamoto, “Revolutional progress of silicon technologies exhibiting very high speed performance over a 50-GHz clock rate,” IEEE Trans. Electron Devices, vol.54, no.6, pp.1471-1477, 2007.
5. [5] L. Zhong, R. Takeda, K. Izunome, Y. Matsushita, Y. Aiba, J. Matsushita, J. Yoshikawa, K. Hayashi, H. Shirai, and H. Saito, “Surface modification of silicon(111) by annealing at high temperature in hydrogen,” Appl. Phys. Lett., vol.68, no.17, pp.2349-2351, 1996.
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