Deep-Donor-Induced Suppression of Current Collapse in an AlGaN-GaN Heterojunction Structure Grown on Si
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Published:2020-04-01
Issue:4
Volume:E103.C
Page:186-190
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ISSN:0916-8524
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Container-title:IEICE Transactions on Electronics
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language:en
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Short-container-title:IEICE Trans. Electron.
Author:
TANAKA Taketoshi1, ITO Norikazu1, TAKADO Shinya1, KUZUHARA Masaaki2, NAKAHARA Ken1
Affiliation:
1. Rohm Co., Ltd. 2. University of Fukui
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Reference25 articles.
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