A Design of X-Band 40W Pulse-Driven GaN HEMT Power Amplifier-Reference-Cited by-同舟云学术

A Design of X-Band 40W Pulse-Driven GaN HEMT Power Amplifier

Published:2013 Issue:6 Volume:E96.C Page:923-934
ISSN:0916-8524
Container-title:IEICE Transactions on Electronics
language:en
Short-container-title:IEICE Trans. Electron.

Author:

JEONG Hae-Chang¹,YEOM Kyung-Whan¹

Affiliation:

1. Chungnam National University

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/transele/E96.C/6/E96.C_923/_pdf

Reference27 articles.

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3. [3] C.F. Campbell and M. Poulton, “Compact highly integrated X-band power amplifier using commercially available discrete GaN FETs,” Proc. Asia-Pacific Microw. Conf., pp.243-246, Dec. 2011.

4. [4] K. Kanto, A. Satomi, Y. Asahi, Y. Kashiwabara, K. Matsushita, and K. Takagi, “An X-band 250W solid-state power amplifier using GaN power HEMTs,” IEEE Radio and Wireless Symp., pp.77-80, Jan. 2008.

5. [5] Y. Yamashita, T. Nakada, T. Kumamoto, R. Suzuki, and M. Tanabe, “X-band GaN HEMT advanced power amplifier unit for compact active phased array antennas,” ICCAS-SICE, pp.3047-3050, Aug. 2009.

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