Delay Time Component of InGaAs MOSFET Caused by Dynamic Source Resistance-Reference-Cited by-同舟云学术

Delay Time Component of InGaAs MOSFET Caused by Dynamic Source Resistance

Published:2014 Issue:5 Volume:E97.C Page:419-422
ISSN:0916-8524
Container-title:IEICE Transactions on Electronics
language:en
Short-container-title:IEICE Trans. Electron.

Author:

YAMADA Masayuki¹,UCHIDA Ken²,MIYAMOTO Yasuyuki¹

Affiliation:

1. Department of Physical Electronics, Tokyo Institute of Technology

2. Department of Electronics and Electrical Engineering, Keio University

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/transele/E97.C/5/E97.C_419/_pdf

Reference14 articles.

1. [1] K. Natori, “Ballistic metal-oxide-semiconductor field effect transistor,” J. Appl. Phys., vol.76, no.8, pp.4879-4890, Oct. 1994.

2. [2] M.S. Lundstrom and J. Guo, Nanoscale Transistors: Device Physics, Modeling and Simulation, p.91, Springer, New York, 2006.

3. [3] Y. Xuan, Y.Q. Wu, and P.D. Ye, “High-performance inversion-type enhancement-mode InGaAs MOSFET with maximum drain current exceeding 1A/mm,” IEEE Electron Device Lett., vol.29, no.4, pp.294-296, April 2008.

4. [4] R. Terao, T. Kanazawa, S. Ikeda, Y. Yonai, A. Kato, and Y. Miyamoto, “InP/InGaAs composite metal-oxide-semiconductor field-effect transistors with regrown source and Al₂O₃ gate dielectric exhibiting maximum drain current exceeding 1.3mA/µm,” Appl. Phys. Exp., vol.4, no.5, pp.054201-1-054201-3, April 2011.

5. [5] M. Egard, L. Ohlsson, B.M. Borg, F. Lenrick, R. Wallenberg, L.-E. Wernersson, and E. Lind, “High transconductance self-aligned gate-last surface channel In_0.53Ga_0.47As MOSFET,” Int. Electron Devices Meet., pp.13.2.1-13.2.4, 2011.