High Speed 1.1-.MU.m-Range InGaAs-Based VCSELs

Author:

SUZUKI Naofumi1,ANAN Takayoshi1,HATAKEYAMA Hiroshi1,FUKATSU Kimiyoshi1,YASHIKI Kenichiro1,TOKUTOME Keiichi1,AKAGAWA Takeshi1,TSUJI Masayoshi1

Affiliation:

1. Nano-Electronics Res. Labs., NEC Corporation

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. [1] K.L. Lear, V.M. Hietala, H.Q. Hou, J. Banas, B.E. Hammons, J. Zolper, and S.P. Kilcoyne, “High-speed 850nm oxide-confined vertical cavity surface emitting lasers, ” Ultrafast Electronics and Optoelectronics 1997 Topical Meeting, Tech. Digest, pp.80-82, 1997.

2. Polyimide-Planarized Vertical-Cavity Surface-Emitting Lasers With 17.0-GHz Bandwidth

3. [3] P. Pepeljugoski, D. Kuchta, Y. Kwark, P. Pleunis, and G. Kuyt, “15.6-Gb/s transmission over 1km of next generation multimode fiber, ” IEEE Photonics Technol. Lett., vol.14, no.5, pp.717-719, 2004.

4. [4] D.M. Kuchta, P. Pepeljugoski, and Y. Kwark, “VCSEL modulation at 20Gb/s over 200m of multimode fiber using a 3.3v SiGe laser driver IC, ” WA1.2, LEOS Summer Topical Meeting 2001, 2001.

5. [5] B.M. Hawkins, R.A. Hawthorne, III, J.K. Guenter, J.A. Tatum, and J.R. Biard, “Reliability of various size oxide aperture VCSELs, ” Proc. 52nd Electron. Components and Technol. Conf., pp.540-550, 2002.

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