Enhanced high-frequency modulation of single-mode 850nm VCSELs via dual transverse-cavity integration
Author:
Affiliation:
1. Institute of Innovative Research, Tokyo Institute of Technology
2. Faculty of Science, Minia University
3. Faculty of Science, Al-Azhar University
4. Ambition Photonics Inc.
5. Faculty of Science, King Abdulaziz University
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Link
https://www.jstage.jst.go.jp/article/elex/21/4/21_21.20230620/_pdf
Reference36 articles.
1. [1] K. Iga: “Vertical-cavity surface-emitting laser: Its conception and evolution,” Jpn. J. Appl. Phys. 47 (2008) 1 (DOI: 10.1143/jjap.47.1).
2. [2] F. Koyama: “Recent advances of VCSEL photonics,” J. Lightw. Technol. 24 (2006) 4502 (DOI: 10.1109/jlt.2006.886064).
3. [3] N. Suzuki, et al.: “High speed 1.1-µm-range InGaAs-based VCSELs,” IEICE Trans. Electron. E92-C (2009) 942 (DOI: 10.1587/transele.E92.C.942).
4. [4] A. Larsson, et al.: “High speed VCSELs and VCSEL arrays for single and multicore figer lnterconnects,” Proc. SPIE 9381 (2015) 93810D-1 (DOI: 10.1117/12.2082614).
5. [5] D.M. Kuchta, et al.: “A 71-Gb/s NRZ modulated 850-nm VCSEL-based optical link,” IEEE Photon. Technol. Lett. 27 (2015) 577 (DOI: 10.1109/lpt.2014.2385671).
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