Effect of Nitrogen-Doped LaB<sub>6</sub> Interfacial Layer on Device Characteristics of Pentacene-Based OFET-Reference-Cited by-同舟云学术

Effect of Nitrogen-Doped LaB₆ Interfacial Layer on Device Characteristics of Pentacene-Based OFET

Published:2017 Issue:5 Volume:E100.C Page:463-467
ISSN:0916-8524
Container-title:IEICE Transactions on Electronics
language:en
Short-container-title:IEICE Trans. Electron.

Author:

MAEDA Yasutaka¹,OHMI Shun-ichiro¹,GOTO Tetsuya²,OHMI Tadahiro²

Affiliation:

1. Tokyo Institute of Technology

2. New Industry Creation Hatchery Center, Tohoku University

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/transele/E100.C/5/E100.C_463/_pdf

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