Improvement of the thermal stability of a pentacene-based organic FET utilizing an amorphous rubrene passivation layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://iopscience.iop.org/article/10.7567/1347-4065/ab53ca/pdf
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Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. 3 V operation of pentacene-based floating-gate memory realized by the isolation process with Ar/N2-plasma nitridation for N-doped LaB6 metal and high-k LaB x Ny insulator stacked structure;Japanese Journal of Applied Physics;2023-02-06
2. Sputtering Gas Pressure Dependence on the LaB<sub>x</sub>N<sub>y</sub> Insulator Formation for Pentacene-Based Back-Gate Type Floating-Gate Memory with an Amorphous Rubrene Passivation Layer;IEICE Transactions on Electronics;2022-10-01
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