Interaction of Bis-diethylaminosilane with a Hydroxylized Si (001) Surface for SiO2 Thin-Film Growth Using Density Functional Theory-Reference-Cited by-同舟云学术

Interaction of Bis-diethylaminosilane with a Hydroxylized Si (001) Surface for SiO2 Thin-Film Growth Using Density Functional Theory

Published:2011 Issue:5 Volume:E94-C Page:771-774
ISSN:0916-8524
Container-title:IEICE Transactions on Electronics
language:en
Short-container-title:IEICE Trans. Electron.

Author:

BAEK Seung-Bin¹,KIM Dae-Hee¹,KIM Yeong-Cheol¹

Affiliation:

1. Department of Energy Materials Chemical Engineering, Korea University of Technology and Education 1800 Chungjeollo

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://www.jstage.jst.go.jp/article/transele/E94.C/5/E94.C_5_771/_pdf

Reference15 articles.

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3. [3] V. Wiaux, G. Stroms, S. Cheng, and M. Maenhoudt, “The potential of double patterning immersion lithography for the 32nm half pitch node,” EuroAsia Semiconductor, pp.19-22, 2007.

4. [4] Y.-M. You, H.-S. Park, and T.-H. Yoon, “The deposition method for SiO₂,” Korea patent, 10-2008-0077270, 2008.

5. Ab initiomolecular dynamics for liquid metals

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1. Effect of deposition temperature and surface reactions in atomic layer deposition of silicon oxide using Bis(diethylamino)silane and ozone;Applied Surface Science;2022-01

2. Effect of Al Electronic Configuration on the SiO2 Thin Film Growth via Catalytic Self-Assembling Deposition;The Journal of Physical Chemistry C;2013-10-28

3. Adsorption and surface reaction of bis-diethylaminosilane as a Si precursor on an OH-terminated Si (001) surface;Applied Surface Science;2012-06