Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor-Reference-Cited by-同舟云学术

Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor

Published:2011 Issue:5 Volume:E94.C Page:730-736
ISSN:0916-8524
Container-title:IEICE Transactions on Electronics
language:en
Short-container-title:IEICE Trans. Electron.

Author:

MURAGUCHI Masakazu¹,SAKURAI Yoko²,TAKADA Yukihiro²,NOMURA Shintaro²,SHIRAISHI Kenji²,IKEDA Mitsuhisa³,MAKIHARA Katsunori³,MIYAZAKI Seiichi⁴,SHIGETA Yasuteru⁵,ENDOH Tetsuo¹

Affiliation:

1. Center for Interdisciplinary Research, Tohoku University

2. Graduate School of Pure and Applied Science, University of Tsukuba

3. Graduate School of Advanced Sciences of Matter, Hiroshima University

4. Graduate School of Engineering, Nagoya University

5. Department of Materials Engineering Science, Graduate Schoold of Engineering Science, Osaka University

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/transele/E94.C/5/E94.C_5_730/_pdf

Reference21 articles.

1. [1] Y. Sakurai, J.I. Iwata, M. Muraguchi, Y. Shigeta, Y. Takada, S. Nomura, T. Endoh, S. Saito, K. Shiraishi, M. Ikeda, K. Makihara, and S. Miyazaki, “Temperature dependence of electron tunneling between two dimensional electron gas and Si quantum dots,” Jpn. J. Appl. Phys., vol.49, 014001, 2010.

2. [2] M. Ikeda, Y. Shimizu, H. Murakami, and S. Miyazaki, “Multi-step electron charging in silicon-quantum dot floating gate metal-oxide-semiconductor memories,” Jpn. J. Appl. Phys., vol.42, no.6B, pp.4134-4137, 2003.

3. [3] M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi, and T. Endoh, “Bias voltage sweep speed dependence of electron injection in Si-nano-dots floating gate MOS capacitor,” Tech. Dig. of 2010 International Meeting for Future of Electron Devices, Kansai (IMFEDK2010), pp.48-49, 2010.

4. [4] M. Muraguchi, Y. Sakurai, Y. Takada, S. Nomura, K. Shiraishi, K. Makihara, M. Ikeda, S. Miyazaki, Y. Shigeta, and T. Endoh, “Collective tunneling model between two-dimensional electron gas to Si-nano dot,” AIP. Conference Proc., in press.

5. [5] S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E.F. Crabbe, and K. Chan, “A silicon nanocrystals based memory,” Appl. Phys. Lett., vol.68, no.10, pp.1377-1379, March 1996.

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