Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots-Reference-Cited by-同舟云学术

Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots

Published:2010-01-20 Issue:1 Volume:49 Page:014001
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sakurai Yoko,Iwata Jun-ichi,Muraguchi Masakazu,Shigeta Yasuteru,Takada Yukihiro,Nomura Shintaro,Endoh Tetsuo,Saito Shin-ichi,Shiraishi Kenji,Ikeda Mitsuhisa,Makihara Katsunori,Miyazaki Seiichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference20 articles.

1. Single-electron charging and periodic conductance resonances in GaAs nanostructures

2. Size dependence of the characteristics of Si single-electron transistors on SIMOX substrates

3. Single electron charging and single electron tunneling in sub-micron double barrier transistor structures

4. Kondo effect in an integer-spin quantum dot

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