Affiliation:
1. University of Tokyo
2. National Institute of Advanced Industrial Science and Technology
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. Novel Co-Design of NAND Flash Memory and NAND Flash Controller Circuits for Sub-30 nm Low-Power High-Speed Solid-State Drives (SSD)
2. [2] C. Park, P. Talawar, D. Won, M.J. Jung, J.B. Im, S. Kim, and Y. Choi, “A high performance controller for NAND flash-based solid state disk (NSSD),” NVSMW Tech. Dig., pp.17-20, 2006.
3. A 1.0V power supply, 9.3GB/s write speed, Single-Cell Self-Boost program scheme for high performance ferroelectric NAND flash SSD
4. [4] S. Sakai and R. Ilangovan, “Metal-ferroelectric-insulator-semicon-ductor memory FET with long retention and high endurance,” IEEE Electron Device Lett., vol.25, no.6, pp.369-371, June 2004.
5. [5] T. Hatanaka, M. Takahashi, S. Sakai, and K. Takeuchi, “Improvement of read disturb, program disturb and data retention by memory cell VTH optimization, of ferroelectric (Fe)-NAND flash memories for highly reliable and low power enterprise solid-state drives (SSDs),” IEICE Trans. Electron., vol.E94-C, no.4, pp.539-547, April 2011.