A 30 MHz–3 GHz watt-level stacked-FET linear power amplifier
Author:
Affiliation:
1. Institute of Microelectronics of Chinese Academy of Sciences
2. Schoool of Microelectronics, Xidian University
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://www.jstage.jst.go.jp/article/elex/16/11/16_16.20190252/_pdf
Reference32 articles.
1. [1] D. Chen, et al.: “A package-level wideband driver amplifier with 134% fractional bandwidth,” IEICE Electron. Express 15 (2018) 20180179 (DOI: 10.1587/elex.15.20180179).
2. [2] J. Li, et al.: “Multiband and multimode concurrent PA with novel intermodulation tuning network for linearity improvement,” IEEE Microw. Wireless Compon. Lett. 28 (2018) 248 (DOI: 10.1109/LMWC.2018.2794819).
3. [3] H.-F. Wu, et al.: “A compact ultrabroadband stacked traveling-wave GaN on Si power amplifier,” IEEE Trans. Microw. Theory Techn. 66 (2018) 3306 (DOI: 10.1109/TMTT.2018.2828434).
4. [4] X. Zhou, et al.: “1 W, highly efficient, ultra-broadband non-uniform distributed power amplifier in GaN,” IEEE Microw. Wireless Compon. Lett. 23 (2013) 208 (DOI: 10.1109/LMWC.2013.2250270).
5. [5] K. W. Kobayashi, et al.: “A novel 100 MHz–45 GHz input-termination-less distributed amplifier design with low-frequency low-noise and high linearity implemented with a 6 inch 0.15 µm GaN-SiC wafer process technology,” IEEE J. Solid-State Circuits 51 (2016) 2017 (DOI: 10.1109/JSSC.2016.2558488).
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