A self-adaptive blanking time circuit for fast IGBT de-saturation short-circuit protection-Reference-Cited by-同舟云学术

A self-adaptive blanking time circuit for fast IGBT de-saturation short-circuit protection

Published:2020-06-10 Issue:11 Volume:17 Page:20200019-20200019
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Hongyue Zhu¹²,Xinhong Cheng¹,Yifei Xia¹²,Dawei Xu¹,Tiantian Liu¹²,Zhenwei Zhang¹²

Affiliation:

1. The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences

2. Center of Materials Science and Optoelectronics Engineering, the University of Chinese Academy of Sciences

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/elex/17/11/17_17.20200019/_pdf

Reference30 articles.

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2. [2] Y. Shaoyong, et al.: “An industry-based survey of reliability in power electronic converters, IEEE Trans. Ind. Appl. 47 (2011) 1441 (DOI: 10.1109/tia.2011.2124436).

3. [3] H. Luo, et al.: “Modern IGBT gate driving methods for enhancing reliability of highpower converters -- an overview,” Microelectronics Reliability 58 (2016) 141 (DOI: 10.1016/j.microrel.2015.12.022).

4. [4] P.D. Reigosa, et al.: “Improving the shortcircuit reliability in IGBTs: how to mitigate oscillations,” IEEE Trans. Power Electron. 33 (2018) 5603 (DOI: 10.1109/tpel.2017.2783044).

5. [5] J. Chen, et al.: “A smart IGBT gate driver IC with temperature compensated collector current sensing,” IEEE Trans. Power Electron. 34 (2019) 4613 (DOI: 10.1109/tpel.2018.2865788).

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